Integrated circuit structure of capacitive device

ABSTRACT

An integrated circuit structure includes: a first conductive plate disposed in a first layer on a semiconductor substrate; a second conductive plate disposed in a second layer on the semiconductor substrate; a plurality of conductive lines disposed in the first layer, for surrounding the first conductive plate; and a plurality of conductive vias arranged to couple the plurality of conductive lines to the second conductive plate; wherein the second layer is different from the first layer, and the first conductive plate is physically separated from the second conductive plate, the plurality of conductive lines, and the plurality of conductive vias.

BACKGROUND

Capacitors are widely used in integrated circuits. One of the mostcommonly used capacitors is the metal-oxide-metal (MOM) capacitor. Inthe field of Internet of Things (IOT), a high resolution applications,such as a Successive Approximation Register Analog-to-Digital Converter(SAR-ADC), require a plurality of switched capacitors with low powerconsumption and low mismatch. However, the conventional MOM may easilybe affected by electromagnetic (EM) aggression from surroundings whichleads unexpected mean shift of MOM. In addition, the mismatch problem ofthe MOM array may degrade integral nonlinearity/differentialnonlinearity (INL/DNL) performance of the SAR-ADC.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A is a diagram illustrating a capacitive device in accordance withsome embodiments.

FIG. 1B is a diagram illustrating a top view of the capacitive device ofFIG. 1A in accordance with some embodiments.

FIG. 2A is a diagram illustrating a capacitive device in accordance withsome embodiments.

FIG. 2B is a diagram illustrating a top view of the capacitive device ofFIG. 2A in accordance with some embodiments.

FIG. 3 is a diagram illustrating a capacitive device in accordance withsome embodiments.

FIG. 4 is a diagram illustrating a capacitor array in accordance withsome embodiments.

FIG. 5 is a diagram illustrating another capacitor array in accordancewith some embodiments.

FIG. 6 is a diagram illustrating another capacitor array in accordancewith some embodiments.

FIG. 7 is a diagram illustrating another capacitor array in accordancewith some embodiments.

FIG. 8 is a diagram illustrating another capacitor array in accordancewith some embodiments.

FIG. 9 is a diagram illustrating another capacitor array in accordancewith some embodiments.

FIG. 10 is a diagram illustrating a cross-sectional view of a portion ofa capacitor array in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

FIG. 1A is a diagram illustrating a capacitive device 100 in accordancewith some embodiments. FIG. 1B is a diagram illustrating a top view ofthe capacitive device 100 in accordance with some embodiments. Thecapacitive device 100 may be a Metal-Oxide-Metal (MOM) capacitor.Specifically, the capacitive device 100 is a top-closed MOM capacitor.The capacitive device 100 comprises a first electrode 102 and a secondelectrode 104. The capacitive device 100 as shown in FIG. 1A is a celllevel capacitor.

According to some embodiments, the first electrode 102 is configured tobe a metal line on a metal layer, e.g. the fourth metal layer M4, abovea semiconductor substrate. The second electrode 104 is configured to bea cover-shaped device covering the top of the first electrode 102. Thesecond electrode 104 comprises a metal plate 1042, a plurality ofconductive vias, which is simplified as “via” in the followingparagraphs, 1044_1-1044_12, and a plurality of metal lines1046_1-1046_4. It is noted that the metal mentioned above is merely anexample, the metal may be replaced with any conductive materials, e.g.Polycrystalline silicon. The numbers of the vias 1044_1-1044_12 and themetal lines 1046_1-1046_4 may also be replaced with other numbersdepended on the requirement. The first electrode 102 and the secondelectrode 104 are physically separated by an oxide layer (not shown inFIG. 1A) formed between them. Specifically, the first electrode 102 isphysically separated from the second electrode 104, the metal lines1046_1-1046_4, and the vias 1044_1-1044_12 by an oxide layer (not shownin FIG. 1A) formed among them.

According to some embodiments, the metal lines 1046_1-1046_4 are formedon the same metal layer with the first electrode 102, e.g. the fourthmetal layer M4, above the semiconductor substrate (not shown). The metallines 1046_1-1046_4 are configured to be a closed loop surrounding thefirst electrode 102. However, this is not a limitation of the presentembodiment. The second electrode 104 may be an opened loop structure,e.g. a U-shaped structure. The metal plate 1042 is formed on the metallayer above the fourth metal layer M4, e.g. the fifth metal layer M5, onthe semiconductor substrate. The vias 1044_1044_12 are arranged toconnect the metal lines 1046_1-1046_4 to the periphery of the metalplate 1042 respectively. It is noted that the fourth metal layer M4 iscloser to the semiconductor substrate than the fifth metal layer M5.

It is noted that, in another embodiment, the first electrode 102 may beformed on different metal layer from the metal lines 1046_1-1046_4. Forexample, the first electrode 102 may be formed on the third metal layerM3, and the metal lines 1046_1-1046_4 and the metal plate 1042 may beformed on the fourth metal layer M4 and the fifth metal layer M5respectively.

FIG. 2A is a diagram illustrating a capacitive device 200 in accordancewith some embodiments. FIG. 2B is a diagram illustrating a top view ofthe capacitive device 200 in accordance with some embodiments. Thecapacitive device 200 is a bottom-closed MOM capacitor. The capacitivedevice 200 comprises a first electrode 202 and a second electrode 204.The first electrode 202 and the second electrode 204 are physicallyseparated by an oxide layer (not shown in FIG. 2A) formed between them.The capacitive device 200 as shown in FIG. 2A is a cell level capacitor.

According to some embodiments, the first electrode 202 is configured tobe a metal line on a metal layer, e.g. the fifth metal layer M5, above asemiconductor substrate. The second electrode 204 is configured to be acover-shaped device covering the bottom of the first electrode 202. Thesecond electrode 204 comprises a metal plate 2042, a plurality of vias2044_1-2044_12, and a plurality of metal lines 2046_1-2046_4. It isnoted that the metal mentioned above is merely an example, the metal maybe replaced with any conductive materials, e.g. Polycrystalline silicon.The numbers of the vias 2044_1-2044_12 and the metal lines 2046_1-2046_4may also be replaced with other numbers depended on the requirement.

According to some embodiments, the metal lines 2046_1-2046_4 are formedon the same metal layer with the first electrode 202, e.g. the fifthmetal layer M5. The metal lines 2046_1-2046_4 are configured to be aclosed loop. However, this is not a limitation of the presentembodiment. The second electrode 204 may be an opened loop structure,e.g. a U-shaped structure. The metal plate 2042 is formed on the metallayer below the fifth metal layer M5, e.g. the fourth metal layer M4.The vias 2044_2044_12 are arranged to connect the metal lines2046_1-2046_4 to the periphery of the metal plate 2042 respectively.

It is noted that, in another embodiment, the first electrode 202 may beformed on different metal layer from the metal lines 2046_1-2046_4. Forexample, the first electrode 202 may be formed on the sixth metal layerM6 above the semiconductor substrate (not shown), and the metal lines2046_1-2046_4 and the metal plate 2042 may be formed on the fifth metallayer M5 and the fourth metal layer M4 above the semiconductor substraterespectively. It is noted that the fourth metal layer M4 is closer tothe semiconductor substrate than the fifth metal layer M5, and the fifthmetal layer M5 is closer to the semiconductor substrate than the sixthmetal layer M6.

The capacitive device 100 as well as 200 may be used in high resolutionapplications that require high matching performance. For example, thecapacitive device 100 may be applied in the switched capacitors of a 10bits SAR-ADC (Successive Approximation Register Analog-to-DigitalConverter). When the capacitive device 100 is applied in the switchedcapacitors, the first electrode 102 (as well as 202) is connected to thesignal node and the second electrode 104 (as well as 204) is connectedto the common node.

According to the embodiments, when the second electrode 104 covers thetop of the fist electrode 102, the electric field of the capacitivedevice 100 may be confined in the overlapped area between the firstelectrode 102 and the second electrode 104. When the electric field isconfined between the first electrode 102 and the second electrode 104,the electromagnetic (EM) may not radiate to or extend the area outsidethe overlapped area. Therefore, the fringing effect of the capacitivedevice 100 is improved. When the fringing effect of the capacitivedevice 100 is improved, the mismatch problem or spatial effect is alsoimproved when a plurality of capacitive devices 100 as well as 200 areapplied in the switched capacitors of a high resolution SAR-ADC.

FIG. 3 is a diagram illustrating a capacitive device 300 in accordancewith some embodiments. The capacitive device 300 may be a MOM capacitor.Specifically, the capacitive device 300 is a finger MOM capacitor. Thecapacitive device 300 comprises a first electrode 302, a secondelectrode 304, a plurality of dummy metal lines 306 and 308, and aplurality of shielding metal lines 310 and 312. The capacitive device300 as shown in FIG. 3 is a cell level capacitor. The first electrode302 and the second electrode 304 are physically separated by an oxidelayer (not shown in FIG. 1A) formed between them. The dummy metal lines306 and 308 are floating metals. In other words, the dummy metal lines306 and 308 are electrically isolated from the first electrode 302, thesecond electrode 304, and the shielding metal lines 310 and 312. Theshielding metal lines 310 and 312 are electrically connected to areference voltage, e.g. a ground voltage. In an application, the firstelectrode 302 is connected to the signal node and the second electrode304 is connected to the common node.

According to some embodiments, the first electrode 302 is configured tobe a metal line on a metal layer, e.g. the fourth metal layer M4, abovea semiconductor substrate. The second electrode 304 comprising threemetal lines 3042, 3044, and 3046, and are configured to be a U-shapeddevice surrounding the first electrode 302 and the dummy metal lines 306and 308. The second electrode 304, i.e. the metal lines 3042, 3044, and3046, is formed on the same metal layer with the first electrode 102,e.g. the fourth metal layer M4. The dummy metal lines 306 and 308 areformed on the same metal layer with the first electrode 102, e.g. thefourth metal layer M4. The first electrode 302, the metal lines 3042 and3046, and the dummy metal lines 306 and 308 are parallel to each otheron the fourth metal layer M4. According to some embodiments, the firstelectrode 302 is physically separated from the second electrode 304, thedummy metal lines 306 and 308, and the shielding metal lines 310 and 312by oxide layer (not shown in FIG. 1A) formed among them.

The shielding metal lines 310 and 312 are formed on the metal layerdifferent from the fourth metal layer M4. For example, the shieldingmetal lines 310 and 312 may be formed on the third metal layer M3, whichis below the fourth metal layer M4. However, this is not a limitation ofthe present embodiment. In another embodiment, the shielding metal lines310 and 312 may be formed on the fifth metal layer M5, which is abovethe fourth metal layer M4. Moreover, the shielding metal lines 310 and312 are two parallel metal lines overlapping with the dummy metal lines306 and 308 viewed from the top of the capacitive device 300.

According to the embodiments, when the shielding metal lines 310 and 312are connected to the ground voltage, the electric field (i.e. 314 and316) of the capacitive device 300 may be confined by the shielding metallines 310 and 312 such that the electromagnetic (EM) may not radiate toor extend the area outside the shielding metal lines 310 and 312.Therefore, the fringing effect of the capacitive device 300 is improved.

Moreover, when the electric field (i.e. 314 and 316) of the capacitivedevice 300 is confined by the shielding metal lines 310 and 312, thecapacitance of the capacitive device 300 may be fine-tuned to theexpected value. For example, in a version of capacitor when the dummymetal lines 306 and 308 and the shielding metal lines 310 and 312 areomitted, the capacitance is C1. In this embodiment, i.e. the capacitivedevice 300, the capacitance is C2. Then, the capacitance C2 may beaccurately tuned into a half of the capacitance C1. In other words, byusing the present the dummy metal lines 306 and 308 and the shieldingmetal lines 310 and 312, the reduction ratio of the capacitance C2 ofthe capacitive device 300 may be precisely controlled.

FIG. 4 is a diagram illustrating a capacitor array 400 in accordancewith some embodiments. The capacitor array 400 may be a MOM array.Specifically, the capacitor array 400 may be an array of individuallyswitched binary-weighted MOM capacitors that are applied in a highresolution (e.g. 10 bits) SAR-ADC. The capacitive array 400 comprises aplurality of MOM capacitors 402_1-402_a, a plurality of switches404_1-404_b, a dummy MOM capacitor 406, and a shielding structure 408.

According to some embodiments, the capacitor array 400 may be regardedas an array formed by a plurality unit capacitors. The MOM capacitor402_1 may be regarded as the unit capacitor of the capacitor array 400.The MOM capacitor 402_1 comprises a first electrode 410 and a secondelectrode 412. The second electrode 412 is configured to be a U-shapedstructure with two fingers surrounding the first electrode 410. Thefirst electrode 410 and the second electrode 412 are formed on the samemetal layer, e.g. the fourth metal layer M4, on a semiconductorsubstrate.

In FIG. 4, the MOM capacitor 402_2 comprises two unit capacitors. TheMOM capacitor 402_3 comprises four unit capacitors, and so on. It isnoted that, according to the embodiment, two adjacent unit capacitorsshare a common finger. For example, the finger 414 is the common fingerof the two unit capacitors of the MOM capacitor 402_2.

Moreover, one connecting terminal of the switch 404_1 is connected tothe first electrode 410 of the MOM capacitor 402_1. One connectingterminal of the switch 404_2 is connected to the first electrodes 416and 418 of the MOM capacitor 402_2. One connecting terminal of theswitch 404_3 is connected to the first electrodes 420, 422, 424, and 426of the MOM capacitor 402_3. The connectivity of the rest MOM capacitorsand switches are omitted here for brevity. It is noted that the otherconnecting terminals of the switches 404_1-404_b are connected to eachother. Moreover, to improve the matching among the MOM capacitors402_1-402_a, the routing paths of the MOM capacitors 402_1-402_a areequivalent. For example of the MOM capacitor 402_3, the routing pathsfrom the connecting terminal of the switch 404_3 to the first electrodes420 and 422 and the routing paths from the connecting terminal of theswitch 404_3 to the first electrodes 424 and 426 are symmetrical. Inthis embodiment, the first electrode of an MOM capacitor may be thesignal node, and the second electrode of the MOM capacitor may be thecommon node.

According to some embodiments, the dummy MOM capacitor 406 is aduplicated structure of the MOM capacitors 402_1-402_a. Therefore, thedummy MOM capacitor 406 may be identical to the MOM capacitors402_1-402_a. However, the dummy MOM capacitor 406 remains floating or isnot connected to any switch.

According to some embodiments, the shielding structure 408 comprises afirst metal plate 4082, a second metal plate 4084, a third metal plate4086, and a plurality of vias 4088. The first metal plate 4082 and thesecond metal plate 4084 are disposed above the MOM capacitors402_1-402_a and the dummy MOM capacitor 406. The first metal plate 4082and the second metal plate 4084 are configured to extend from one side(e.g. the left side) to the other side (e.g. the right side, not shownin FIG. 4) of the capacitive array 400. The vias 4088 are arranged toconnect the third metal plate 4086 to the edges of the first metal plate4082 and the second metal plate 4084. It is noted that the right side ofthe capacitive array 400 may have structure similar to the left side.

According to some embodiments, the MOM capacitors 402_1-402_a, the thirdmetal plate 4086, and the dummy MOM capacitor 406 are formed in thefourth metal layer M4 (for example). The first metal plate 4082 and thesecond metal plate 4084 are formed in the fifth metal layer M5 (forexample). In other words, the shielding structure 408 is arranged tocover the MOM capacitors 402_1-402_a and the dummy MOM capacitor 406from the upper side. Accordingly, the electric field of the MOMcapacitors 402_1-402_a may be confined by the shielding structure 408.Therefore, the mismatch problem among the MOM capacitors 402_1-402_a isimproved. In other words, the capacitor array 400 have relatively smallmean shift among the MOM capacitors 402_-402_a.

FIG. 5 is a diagram illustrating a capacitor array 500 in accordancewith some embodiments. The capacitor array 500 may be an individuallyswitched binary-weighted MOM capacitors. The capacitive array 500comprises a plurality of MOM capacitors 502_1-502_a, a plurality ofswitches 504_1-504_b, a dummy MOM capacitor 506, and a shieldingstructure 508.

According to some embodiments, the MOM capacitors 502_1-502_a may beregarded as an array formed by a plurality unit capacitors. For example,the MOM capacitor 502_1 may be regarded as the unit capacitor of the MOMcapacitors 502_1-502_a. The dummy MOM capacitor 506 is a duplicatedstructure of the MOM capacitors 502_1-502_a. It is noted that thestructure and the connectivity of the MOM capacitors 502_1-502_a, theswitches 504_1-504_b, and the dummy MOM capacitor 506 are similar to thestructure and the connectivity of the MOM capacitors 402_1-402_a, theswitches 404_1-404_b, and the dummy MOM capacitor 406 respectively, thusthe detailed description is omitted here for brevity.

According to some embodiments, the shielding structure 508 comprises afirst metal plate 5082, a second metal plate 5084, a third metal plate5086, and a plurality of vias 5088. The first metal plate 5082 and thesecond metal plate 5084 are disposed below the MOM capacitors502_1-502_a and the dummy MOM capacitor 506. The first metal plate 5082and the second metal plate 5084 are configured to extend from one side(e.g. the left side) to the other side (e.g. the right side, not shownin FIG. 5) of the capacitive array 500. The vias 5088 are arranged toconnect the third metal plate 5086 to the edges of the first metal plate5082 and the second metal plate 5084. It is noted that the right side ofthe capacitive array 500 may have structure similar to the left side.

According to some embodiments, the MOM capacitors 502_1-502_a, the thirdmetal plate 5086, and the dummy MOM capacitor 506 are formed in thefifth metal layer M5 (for example). The first metal plate 5082 and thesecond metal plate 5084 are formed in the fourth metal layer M4 (forexample). In other words, the shielding structure 508 is arranged tocover the MOM capacitors 502_1-502_a and the dummy MOM capacitor 506from the lower side. Accordingly, the electric field of the MOMcapacitors 502_1-502_a may be confined by the shielding structure 508.Therefore, the mismatch problem among the MOM capacitors 502_1-502_a isimproved.

FIG. 6 is a diagram illustrating a capacitor array 600 in accordancewith some embodiments. The capacitor array 600 may be an individuallyswitched binary-weighted MOM capacitors. The capacitive array 600comprises a plurality of MOM capacitors 602_1-602_a, a plurality ofswitches 604_1-604_b, a dummy MOM capacitor 606, and a shieldingstructure 608.

According to some embodiments, the MOM capacitors 602_1-602_a may beregarded as an array formed by a plurality unit capacitors. For example,the MOM capacitor 602_1 may be regarded as the unit capacitor of the MOMcapacitors 602_1-602_a. The dummy MOM capacitor 606 is a duplicatedstructure of the MOM capacitors 602_1-602_a. It is noted that thestructure and the connectivity of the MOM capacitors 602_1-602_a, theswitches 604_1-604_b, and the dummy MOM capacitor 606 are similar to thestructure and the connectivity of the MOM capacitors 402_1-402_a, theswitches 404_1-404_b, and the dummy MOM capacitor 406 respectively, thusthe detailed description is omitted here for brevity.

According to some embodiments, the shielding structure 608 comprises afirst metal plate 6082, a second metal plate 6084, a third metal plate6086, a fourth metal plate 6088, a fifth metal plate 6090, a pluralityof first vias 6092, and a plurality of second vias 6094. The first metalplate 6082 and the second metal plate 6084 are disposed above the MOMcapacitors 602_1-602_a and the dummy MOM capacitor 606. The third metalplate 6086 and the fourth metal plate 6088 are disposed below the MOMcapacitors 602_1-602_a and the dummy MOM capacitor 606. The metal plates6082, 6084, 6086, and 6088 are configured to extend from one side (e.g.the left side) to the other side (e.g. the right side, not shown in FIG.6) of the capacitive array 600. The first vias 6092 are arranged toconnect the upper surface of the fifth metal plate 6090 to lowersurfaces on the edges of the metal plates 6082 and 6084. The second vias6094 are arranged to connect the lower surface of the fifth metal plate6090 to upper surfaces on the edges of the metal plates 6086 and 6088.It is noted that the right side of the capacitive array 600 may havestructure similar to the left side.

According to some embodiments, the MOM capacitors 602_1-602_a, the fifthmetal plate 6090, and the dummy MOM capacitor 606 are formed in thefifth metal layer M5 (for example). The metal plates 6082 and 6084 areformed in the sixth metal layer M6 (for example). The metal plates 6086and 6088 are formed in the fourth metal layer M4 (for example). In otherwords, the shielding structure 608 is arranged to surround the MOMcapacitors 602_1-602_a and the dummy MOM capacitor 606. Accordingly, theelectric field of the MOM capacitors 602_1-602_a may be confined by theshielding structure 608. Therefore, the mismatch problem among the MOMcapacitors 602_1-602_a is improved.

FIG. 7 is a diagram illustrating a capacitor array 700 in accordancewith some embodiments. The capacitor array 700 may be an individuallyswitched binary-weighted MOM capacitors. The capacitive array 700comprises a plurality of MOM capacitors 702_1-702_a, a plurality ofswitches 704_1-704_b, a dummy MOM capacitor 706, and a shieldingstructure 708.

According to some embodiments, the MOM capacitors 702_1-702_a may beregarded as an array formed by a plurality unit capacitors. For example,the MOM capacitor 702_1 may be regarded as the unit capacitor of the MOMcapacitors 702_1-702_a. The dummy MOM capacitor 706 is a duplicatedstructure of the MOM capacitors 702_1-702_a. It is noted that thestructure and the connectivity of the MOM capacitors 702_1-702_a, theswitches 704_1-704_b, and the dummy MOM capacitor 706 are similar to thestructure and the connectivity of the MOM capacitors 402_1-402_a, theswitches 404_1-404_b, and the dummy MOM capacitor 406 respectively, thusthe detailed description is omitted here for brevity.

According to some embodiments, the shielding structure 708 comprises afirst metal plate 7082, a second metal plate 7084, a third metal plate7086, a plurality of fingers 7088, a plurality of first vias 7090, and aplurality of second vias 7092. The fingers 7088 are disposed above thefingers (e.g. the first electrode 710 and the second electrode 712) ofthe MOM capacitors 702_1-702_a and the dummy MOM capacitor 706.Moreover, the fingers 7088 are overlapped with the fingers of the MOMcapacitors 702_1-702_a and the dummy MOM capacitor 706 viewed from thetop of the capacitor array 700. The first metal plate 7082 is disposedadjacent and parallel to the left most finger 7088 of the shieldingstructure 708. The third metal plate 7086 is disposed adjacent andparallel to the left most finger of the dummy MOM capacitors 706. Thesecond metal plate 7084 is connected to the back ends of the third metalplate 7082 and the fingers 7088. The first vias 7090 are arranged tocouple the first metal plate 7082 to the third metal plate 7086. Thesecond vias 7092 are arranged to couple the second metal plate 7084 tothe second electrodes (e.g. 712) of the MOM capacitors 702_1-702_a andthe dummy second electrodes of the dummy MOM capacitor 706. It is notedthat the right side of the capacitive array 700 may have structuresimilar to the left side.

According to some embodiments, the MOM capacitors 702_1-702_a, the thirdmetal plate 7086, and the dummy MOM capacitor 706 are formed in thefourth metal layer M4 (for example). The first metal plate 7082, thesecond metal plate 7084, and the fingers 7088 are formed in the fifthmetal layer M5 (for example). In other words, the shielding structure708 is arranged to cover the MOM capacitors 702_1-702_a and the dummyMOM capacitor 706 from the upper side. Accordingly, the electric fieldof the MOM capacitors 702_1-702_a may be confined by the shieldingstructure 708. Therefore, the mismatch problem among the MOM capacitors702_1-702_a is improved.

FIG. 8 is a diagram illustrating a capacitor array 800 in accordancewith some embodiments. The capacitor array 800 may be an individuallyswitched binary-weighted MOM capacitors. The capacitive array 800comprises a plurality of MOM capacitors 802_1-802_a, a plurality ofswitches 804_1-804_b, a dummy MOM capacitor 806, and a shieldingstructure 808.

According to some embodiments, the MOM capacitors 802_1-802_a may beregarded as an array formed by a plurality unit capacitors. For example,the MOM capacitor 802_1 may be regarded as the unit capacitor of the MOMcapacitors 802_1-802_a. The dummy MOM capacitor 806 is a duplicatedstructure of the MOM capacitors 802_1-802_a. It is noted that thestructure and the connectivity of the MOM capacitors 802_1-802_a, theswitches 804_1-804_b, and the dummy MOM capacitor 806 are similar to thestructure and the connectivity of the MOM capacitors 402_1-402_a, theswitches 404_1-404_b, and the dummy MOM capacitor 406 respectively, thusthe detailed description is omitted here for brevity.

According to some embodiments, the shielding structure 808 comprises afirst metal plate 8082, a second metal plate 8084, a third metal plate8086, a plurality of fingers 8088, a plurality of first vias 8090, and aplurality of second vias 8092. The fingers 8088 are disposed below thefingers (e.g. the first electrode 810 and the second electrode 812) ofthe MOM capacitors 802_1-802_a and the dummy MOM capacitor 806.Moreover, the fingers 8088 are overlapped with the fingers of the MOMcapacitors 802_1-802_a and the dummy MOM capacitor 806 viewed from thetop of the capacitor array 800. The first metal plate 8082 is disposedadjacent and parallel to the left most finger of the shielding structure808. The third metal plate 8086 is disposed adjacent and parallel to theleft most finger of the dummy MOM capacitors 806. The second metal plate8084 is connected to the back ends of the third metal plate 8082 and thefingers 8088. The first vias 8090 are arranged to couple the first metalplate 8082 to the third metal plate 8086. The second vias 8092 arearranged to couple the second metal plate 8084 to the second electrodes(e.g. 812) of the MOM capacitors 802_1-702_a and the dummy secondelectrodes of the dummy MOM capacitor 806. It is noted that the rightside of the capacitive array 800 may have structure similar to the leftside.

According to some embodiments, the MOM capacitors 802_1-802_a, the thirdmetal plate 8086, and the dummy MOM capacitor 806 are formed in thefifth metal layer M5 (for example). The first metal plate 8082, thesecond metal plate 8084, and the fingers 8088 are formed in the fourthmetal layer M4 (for example). In other words, the shielding structure808 is arranged to cover the MOM capacitors 802_1-802_a and the dummyMOM capacitor 806 from the lower side. Accordingly, the electric fieldof the MOM capacitors 802_1-802_a may be confined by the shieldingstructure 808. Therefore, the mismatch problem among the MOM capacitors802_1-802_a is improved.

FIG. 9 is a diagram illustrating a capacitor array 900 in accordancewith some embodiments. The capacitor array 900 may be an individuallyswitched binary-weighted MOM capacitors. The capacitive array 900comprises a plurality of MOM capacitors 902_1-902_a, a plurality ofswitches 904_1-904_b, a dummy MOM capacitor 906, and a shieldingstructure 908.

According to some embodiments, the MOM capacitors 902_1-902_a may beregarded as an array formed by a plurality unit capacitors. For example,the MOM capacitor 902_1 may be regarded as the unit capacitor of the MOMcapacitors 902_1-902_a. The dummy MOM capacitor 906 is a duplicatedstructure of the MOM capacitors 902_1-902_a. It is noted that thestructure and the connectivity of the MOM capacitors 902_1-902_a, theswitches 904_1-904_b, and the dummy MOM capacitor 906 are similar to thestructure and the connectivity of the MOM capacitors 402_1-402_a, theswitches 404_1-404_b, and the dummy MOM capacitor 406 respectively, thusthe detailed description is omitted here for brevity.

According to some embodiments, the shielding structure 908 comprises afirst metal plate 9082, a second metal plate 9084, a third metal plate9086, a fourth metal plate 9088, a fifth metal plate 9090, a pluralityof first fingers 9092, a plurality of second fingers 9094, a pluralityof first vias 9096, a plurality of second vias 9098, a plurality ofthird vias 9100, and a plurality of fourth vias 9102.

The fingers 9092 are disposed above the fingers (e.g. the firstelectrode 910 and the second electrode 912) of the MOM capacitors902_1-902_a and the dummy MOM capacitor 906. The fingers 9094 aredisposed below the fingers (e.g. the first electrode 910 and the secondelectrode 912) of the MOM capacitors 902_1-902_a and the dummy MOMcapacitor 906. Moreover, the fingers 9092 and 9094 are overlapped withthe fingers of the MOM capacitors 902_1-902_a and the dummy MOMcapacitor 906 viewed from the top of the capacitor array 900. The metalplate 9082 is disposed adjacent and parallel to the left most finger9092 of the shielding structure 906. The metal plate 9088 is disposedadjacent and parallel to the left most finger 9094 of the shieldingstructure 906. The metal plate 9086 is disposed adjacent and parallel tothe left most finger of the MOM capacitors 902_1-902_a. The metal plate9084 is connected to the back ends of the metal plate 9082 and thefingers 9092. The metal plate 9102 is connected to the back ends of themetal plate 9088 and the fingers 9094.

The vias 9096 are arranged to couple the upper surface of the metalplate 9086 to the lower surface of the metal plate 9082. The vias 9098are arranged to couple the upper surface of the second electrodes (e.g.912) of the MOM capacitors 902_1-902_a and the dummy second electrodesof the dummy MOM capacitor 906 to the lower surface of the metal plate9098.

The vias 9100 are arranged to couple the lower surface of the metalplate 9086 to the upper surface of the metal plate 9088. The vias 9102are arranged to couple the lower surface of the second electrodes (e.g.912) of the MOM capacitors 902_1-902_a and the dummy second electrodesof the dummy MOM capacitor 906 to the upper surface of the metal plate9090.

It is noted that the right side of the capacitive array 900 may havestructure similar to the left side.

According to some embodiments, the MOM capacitors 902_1-902_a, the metalplate 9086, and the dummy MOM capacitor 906 are formed in the fifthmetal layer M5 (for example). The metal plates 9082, 9084, and thefinger 9092 are formed in the sixth metal layer M6 (for example). Themetal plates 9088, 9090, and the fingers 9094 are formed in the fourthmetal layer M4 (for example). In other words, the shielding structure908 is arranged to surround the MOM capacitors 902_1-902_a and the dummyMOM capacitor 906. Accordingly, the electric field of the MOM capacitors902_1-902_a may be confined by the shielding structure 908. Therefore,the mismatch problem among the MOM capacitors 902_1-902_a is improved.

FIG. 10 is a diagram illustrating a cross-sectional view of a portion1000 of a capacitor array in accordance with some embodiments. Thecapacitor array may be an enhanced version of the capacitor array 700.However, this is not a limitation of the present embodiment. The idealmay be applied in all the other embodiments, e.g. the capacitor arrays400, 500, 600, 800, or 900. The portion 1000 comprises a plurality offirst-electrode fingers 1002, a plurality second-electrode fingers 1004,a plurality of vias 1006, a metal plate 1008, and a plurality of dummymetal plates 1010. The vias 1006 are arranged to couple thesecond-electrode fingers 1004 to the metal plate 1008. The structure ofthe first-electrode fingers 1002, the second-electrode fingers 1004, thevias 1006, and the metal plate 1008 are similar to the MOM capacitors ofthe capacitor array 700, thus the detailed description is omitted herefor brevity.

In this embodiment, the dummy metal plates 1010 are disposed below thefirst-electrode fingers 1002 and the second-electrode fingers 1004. Thedummy metal plates 1010 may have uniform and regular dummy pattern.Specifically, the metal width of each dummy metal plate 1010 is similarto the width of the corresponding finger such that the first-electrodefingers 1002 and the second-electrode fingers 1004 are overlapped withthe dummy metal plates 1010 viewed from the top of the capacitor array.

According to some embodiments, the first-electrode fingers 1002 and thesecond-electrode fingers 1004 may be formed in the fifth metal layer M5(for example). The metal plate 1008 may be formed in the sixth metallayer M6 (for example). The dummy metal plates 1010 may be formed in thefourth metal layer M4 (for example).

When the dummy pattern of the dummy metal plates 1010 is similar to thepattern of the first-electrode fingers 1002 and the second-electrodefingers 1004 of a MOM capacitor, the coupling error of the MOM capacitormay be reduced. Accordingly, the mismatch problem among the MOMcapacitors may be improved.

Briefly, the proposed embodiment provides a binary-weighted MOMcapacitors that are applied in a high resolution SAR-ADC. The MOMcapacitors has relatively low operation current and low powerconsumption. The electric and magnetic fields of the MOM capacitors areconfined by the present shielding device such that the coupling error isminimized and the mismatch problem among the MOM capacitors is improved.

It is noted that the term “metal” mentioned in the above embodiments ismerely an exemplary conductive material, and this is not a limitation ofthe present embodiments.

In some embodiments, the present disclosure provides an integratedcircuit structure. The integrated circuit structure comprises a firstconductive plate, a second conductive plate, a plurality of conductivelines, and a plurality of conductive vias. The first conductive plate isdisposed in a first layer on a semiconductor substrate. The secondconductive plate is disposed in a second layer on the semiconductorsubstrate. The plurality of conductive lines are disposed in the firstlayer for surrounding the first conductive plate. The plurality ofconductive vias are arranged to couple the plurality of conductive linesto the second conductive plate. The second layer is different from thefirst layer, and the first conductive plate is physically separated fromthe second conductive plate, the plurality of conductive lines, and theplurality of vias.

In some embodiments, the present disclosure provides an integratedcircuit structure. The integrated circuit structure comprises a firstconductive plate, a plurality of second conductive plates, a pluralityof conductive lines, and a plurality of third conductive plates. Thefirst conductive plate is disposed in a first layer on a semiconductorsubstrate. The plurality of second conductive plates is disposed in thefirst layer. The plurality of conductive lines is disposed in the firstlayer, for covering the first conductive plate and the plurality ofsecond conductive plates. The plurality of third conductive plates aredisposed on a second layer on a semiconductor substrate. The secondlayer is different from the first layer, the first conductive plate isphysically separated from the plurality of second conductive plates, theplurality of conductive lines, and the plurality of third conductiveplates, and the plurality of second conductive plates are substantiallyoverlapped with the plurality of third conductive plates viewed from atop of the integrated circuit structure respectively.

In some embodiments, the present disclosure provides an integratedcircuit structure. The integrated circuit structure comprises aplurality of capacitors, a first conductive plate, a second conductiveplate, and a plurality of first conductive vias. The plurality ofcapacitors are disposed in a first layer on a semiconductor substrate.The first conductive plate is disposed in the first layer on a firstside of the plurality of capacitors. The second conductive plate isdisposed in a second layer on the semiconductor substrate for extendingto a second side of the plurality of capacitors from the first side ofthe plurality of capacitors. The plurality of first conductive vias arearranged to couple the first conductive plate to an edge of the secondconductive plate.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is: 1-5. (canceled)
 6. An integrated circuit structure,comprising: a first conductive plate, disposed in a first layer on asemiconductor substrate; a plurality of second conductive plates,disposed in the first layer; a plurality of conductive lines, disposedin the first layer, for covering the first conductive plate and theplurality of second conductive plates, wherein the plurality ofconductive lines are electrically isolated from the plurality of secondconductive plates; and a plurality of third conductive plates, disposedon a second layer on the semiconductor substrate; wherein the secondlayer is different from the first layer, the first conductive plate isphysically separated from the plurality of second conductive plates, theplurality of conductive lines, and the plurality of third conductiveplates, and the plurality of second conductive plates are substantiallyoverlapped with the plurality of third conductive plates viewed from atop of the integrated circuit structure respectively.
 7. The integratedcircuit structure of claim 6, wherein the plurality of second conductiveplates are floating plates, and the plurality of third conductive platesare electrically coupled to a reference voltage.
 8. The integratedcircuit structure of claim 6, wherein the plurality of conductive linesare configured to be a U-shaped line for covering the first conductiveplate and the plurality of second conductive plates. 9-20. (canceled)21. An integrated circuit structure, comprising: a plurality ofcapacitors, disposed in a first layer on a semiconductor substrate,wherein each capacitor comprises: a first conductive plate, disposed ina first layer on a semiconductor substrate; and a plurality ofconductive lines, disposed in the first layer, for surrounding the firstconductive plate; a shielding structure, arranged to confine an electricfield of the plurality of capacitors, wherein the shielding structurecomprises: a second conductive plate, disposed in the first layer on afirst side of the plurality of capacitors; a third conductive plate,disposed in a second layer on the semiconductor substrate, for extendingto a second side of the plurality of capacitors from the first side ofthe plurality of capacitors; and a plurality of first conductive vias,arranged to couple the second conductive plate to an edge of the thirdconductive plate.
 22. The integrated circuit structure of claim 21,wherein the shielding structure further comprises: a fourth conductiveplate, disposed in the second layer and in parallel to the thirdconductive plate, for extending to the second side of the plurality ofcapacitors from the first side of the plurality of capacitors; whereinthe plurality of first conductive vias are further arranged to couplethe second conductive plate to an edge of the fourth conductive plate.23. The integrated circuit structure of claim 22, wherein the shieldingstructure further comprises: a fifth conductive plate, disposed in athird layer on the semiconductor substrate, for extending to the secondside of the plurality of capacitors from the first side of the pluralityof capacitors, wherein the third layer is different from the first layerand the second layer; and a plurality of second conductive vias,arranged to couple the second conductive plate to an edge of the fifthconductive plate.
 24. The integrated circuit structure of claim 23,wherein the shielding structure further comprises: a sixth conductiveplate, disposed in the third layer and in parallel to the fifthconductive plate, for extending to the second side of the plurality ofcapacitors from the first side of the plurality of capacitors; whereinthe plurality of second conductive vias are further arranged to couplethe second conductive plate to an edge of the sixth conductive plate.25. The integrated circuit structure of claim 21, wherein the shieldingstructure further comprises: a fourth conductive plate, disposed in thesecond layer and in parallel to the second conductive plate, forconnecting to the edge of the third conductive plate; wherein theplurality of first conductive vias are arranged to connect the secondconductive plate to the fourth conductive plate.
 26. The integratedcircuit structure of claim 25, wherein the shielding structure furthercomprises: a plurality of first conductive fingers disposed in thesecond layer and coupled to the third conductive plate; wherein theplurality of first conductive fingers are substantially overlapped withthe first conductive plate of each of the plurality of capacitors viewedfrom a top of the integrated circuit structure respectively.
 27. Theintegrated circuit structure of claim 26, wherein the shieldingstructure further comprises: a plurality of second conductive vias,arranged to couple the third conductive plate to the plurality ofconductive lines.
 28. The integrated circuit structure of claim 27,wherein the shielding structure further comprises: a plurality of dummyconductive plates, disposed in a third layer on the semiconductorsubstrate; wherein the third layer is different from the first layer andthe second layer, and the plurality of dummy conductive plates aresubstantially overlapped with the first conductive plate of each of theplurality of capacitors viewed from the top of the integrated circuitstructure respectively.
 29. The integrated circuit structure of claim27, wherein the shielding structure further comprises: a fifthconductive plate, disposed in a third layer on the semiconductorsubstrate, for extending to the second side of the plurality ofcapacitors from the first side of the plurality of capacitors, whereinthe third layer is different from the first layer and the second layer;and a plurality of third conductive vias, arranged to couple the secondconductive plate to an edge of the fifth conductive plate.
 30. Theintegrated circuit structure of claim 29, wherein the shieldingstructure further comprises: a sixth conductive plate, disposed in thethird layer and in parallel to the second conductive plate, forconnecting to the edge of the fifth conductive plate; wherein theplurality of third conductive vias are arranged to connect the secondconductive plate to the sixth conductive plate.
 31. The integratedcircuit structure of claim 30, wherein the shielding structure furthercomprises: a plurality of second conductive fingers disposed in thethird layer and coupled to the fifth conductive plate; wherein theplurality of second conductive fingers are substantially overlapped withthe first conductive plate of each of the plurality of capacitors viewedfrom the top of the integrated circuit structure respectively.
 32. Theintegrated circuit structure of claim 31, wherein the shieldingstructure further comprises: a plurality of fourth conductive vias,arranged to couple the fifth conductive plate to the plurality ofconductive lines. 33-37. (canceled)
 38. A method of manufacturing anintegrated circuit structure, comprising: forming a first conductiveplate in a first layer on a semiconductor substrate; forming a pluralityof second conductive plates in the first layer; forming a plurality ofconductive lines in the first layer to surround the first conductiveplate and the plurality of second conductive plates, wherein theplurality of conductive lines are electrically isolated from theplurality of second conductive plates; and forming a plurality of thirdconductive plates on a second layer on the semiconductor substrate,wherein the second layer is different from the first layer, and thefirst conductive plate is physically separated from the plurality ofsecond conductive plates, the plurality of conductive lines and theplurality of third conductive plates, and the plurality of secondconductive plates are substantially overlapped with the plurality ofthird conductive plates viewed from a top of the integrated circuitstructure respectively.
 39. The method of claim 38, wherein forming theplurality of second conductive plates in the first layer comprises:forming the plurality of second conductive plates as floating plates.40. The method of claim 38, wherein forming the plurality of thirdconductive plates on the second layer on the semiconductor substratecomprises: forming the plurality of third conductive plates electricallycoupled to a reference voltage.
 41. The method of claim 38, whereinforming the plurality of conductive lines in the first layer to surroundthe first conductive plate and the plurality of second conductive platescomprises: forming the plurality of conductive lines configured to be aU-shaped line to surround the first conductive plate and the pluralityof second conductive plates.
 42. The method of claim 38, wherein formingthe plurality of second conductive plates in the first layer comprises:forming the plurality of second conductive plates parallel to the firstconductive plate, wherein a portion of the plurality of secondconductive plates is separated from another portion of the plurality ofsecond conductive plates by the first conductive plate.